From Leroy and Rancoita (2011):

Nuclear stopping power (in units of MeV/cm) is Silicon medium for different incoming ions as function of the kinetic energy compared to ASTAR and SRIM results:

Total stopping power of protons in Silicon where the effect of relativistic correction is underlined:

 

From M.J. Boschini et al. (2011):

Comparison of the nuclear stopping power obtained with Wentzel cross section with respect ICRU tabulated values for protons and alpha particles in different target material:

Comparison of the nuclear stopping power obtained with SR-NIEL code with respect ICRU tabulated values for protons and alpha particles in different target material:

Comparison of the NIEL obtained with SR-NIEL code with respect values in literature:

 

 

From M.J. Boschini et al. (2012):

NIEL for electrons in Silicon as a function of the kinetic energy compared to values in literature:

 

 

 

From C.Baur et al. (2014):

NIEL for electrons in Silicon as a function of the kinetic energy compared to values in literature:

Overall introduction rates of defects in GaAs resulting from irradiations with electrons as a function of the particle energy:

P/Pmax ratio of GaAs single junction solar cells as a function of the NIEL Dose obtained with SR-NIEL:

 

 

Comparison with ICRU 1993 (see also PSTAR and ASTAR) for protons and alpha particles in different materials (SR-NIEL Code version 1.5 November 2014):

 

Comparison with table obtained from SRIM (v. 2013.0) for Si and Pb ions incident on different target materials (SR-NIEL Code version 1.5 November 2014):

Comparison of the SR-treatment for electrons with experimental data on a few nuclei:

FormFactor1

FormFactor2

FormFactor3