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In this page,  sr-niel results are shown in different sections:

 

 

Screened relativist treatment

From Leroy and Rancoita (2016):

Nuclear stopping power (in units of MeV/cm) in Silicon medium for different incoming ions as function of the kinetic energy compared to ASTAR and SRIM results:

in Si

Nuclear stopping power (in units of MeV/cm) is Lead medium for different incoming ions as function of the kinetic energy compared to ASTAR and SRIM results:

in Pb

Total stopping power of protons in Silicon where the effect of relativistic correction is underlined:

Stopping Powers

From C.Baur et al. (2014):

NIEL for electrons in Silicon as a function of the kinetic energy compared to values in literature:

Overall introduction rates of defects in GaAs resulting from irradiations with electrons as a function of the particle energy:

 

From M.J. Boschini et al. (2012):
NIEL for electrons in Silicon as a function of the kinetic energy compared to values in literature:

 

From M.J. Boschini et al. (2011):
Comparison of the nuclear stopping power obtained with Wentzel cross section with respect ICRU tabulated values for protons and alpha particles in different target material:

Comparison of the nuclear stopping power obtained with SR-NIEL code with respect ICRU tabulated values for protons and alpha particles in different target material:

Comparison of the NIEL obtained with SR-NIEL code with respect values in literature:

 

Comparison with ICRU 1993 (see also PSTAR and ASTAR) for protons and alpha particles in different materials (SR-NIEL Code version 1.5 November 2014):

Comparison with table obtained from SRIM (v. 2013.0) for Si and Pb ions incident on different target materials (SR-NIEL Code version 1.5 November 2014):

Comparison of the SR-treatment for electrons with experimental data on a few nuclei:

FormFactor1

FormFactor2

FormFactor3

 

 

 


SR-NIEL results from solar cells radiation damage investigation with electrons, protons and neutrons

 

SR-NIEL results from solar cells radiation damage investigation with electrons, protons and neutrons
From R.Campesato et al. (2019).
Optimal fit of Pmax degradation curve for TJ, mid cell, top cell and bottom cell:

image2

 

Comparison of the DLTS spectra of middle junctions irradiated by protons (3.69x1010 MeV g-1), electrons (1.07x1010 MeV g-1) and neutrons (9.96x1010 MeV g-1), respectively. Emission rate =46 s-1, pulse width=500 μs, reverse voltage Vr=-1.5 V, pulse voltage V1=-0.1 V:

image3

Concentration of E2 traps induced by irradiations with electrons, protons and neutrons in middle sub cell diodes as a function of DDD with Ed=21.5 eV:

image4

 

 

From NIEL dose analisies on triple solar junctions: recent results (2018). 

From R.Campesato et al. (2018).
Concentration of E1 traps induced by electron irradiation in middle sub cell as a function of the displacement damage dose (obtained with Ed=21 eV):

E1 Dose

Concentration of E2 traps induced by electron and proton irradiation in middle sub cell as a function of the displacement damage dose (obtained with Ed=21 eV):

E2 Dose

E1 traps introduction rate as a function of incoming electron energy: right scale NIEL values in GaAs sub cell for electrons.

Electrons E1

E2 traps concentration rate as a function of incoming electron (top) and proton (bottom) energy: right scale NIEL values in GaAs sub cell for protons and electrons.

Electrons E2

Protons E2


From C.Baur et al. (2017).
(a) Optimal fit of Pmax/Pmax(0) as function of the dose for the 3J solar cell;
(b) Optimal fit of Pmax/Pmax(0) as function of the dose for single junction bottom cell.

3J plus bottom

 

 

From C.Baur et al. (2014):
P/Pmax ratio of GaAs single junction solar cells as a function of the NIEL Dose obtained with SR-NIEL:

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