In this page,  sr-niel results are shown in different sections:

 

 

Screened relativist treatment

From Leroy and Rancoita (2016):

Nuclear stopping power (in units of MeV/cm) in Silicon medium for different incoming ions as function of the kinetic energy compared to ASTAR and SRIM results:

in Si

Nuclear stopping power (in units of MeV/cm) is Lead medium for different incoming ions as function of the kinetic energy compared to ASTAR and SRIM results:

in Pb

Total stopping power of protons in Silicon where the effect of relativistic correction is underlined:

Stopping Powers

From C.Baur et al. (2014):

NIEL for electrons in Silicon as a function of the kinetic energy compared to values in literature:

Overall introduction rates of defects in GaAs resulting from irradiations with electrons as a function of the particle energy:

 

From M.J. Boschini et al. (2012):
NIEL for electrons in Silicon as a function of the kinetic energy compared to values in literature:

 

From M.J. Boschini et al. (2011):
Comparison of the nuclear stopping power obtained with Wentzel cross section with respect ICRU tabulated values for protons and alpha particles in different target material:

Comparison of the nuclear stopping power obtained with SR-NIEL code with respect ICRU tabulated values for protons and alpha particles in different target material:

Comparison of the NIEL obtained with SR-NIEL code with respect values in literature:

 

Comparison with ICRU 1993 (see also PSTAR and ASTAR) for protons and alpha particles in different materials (SR-NIEL Code version 1.5 November 2014):

Comparison with table obtained from SRIM (v. 2013.0) for Si and Pb ions incident on different target materials (SR-NIEL Code version 1.5 November 2014):

Comparison of the SR-treatment for electrons with experimental data on a few nuclei:

FormFactor1

FormFactor2

FormFactor3

 

 

 


SR-NIEL results from solar cells radiation damage investigation

 

From NIEL dose analisies on triple solar junctions: recent results (2018). 

From R.Campesato et al. (2018).
Concentration of E1 traps induced by electron irradiation in middle sub cell as a function of the displacement damage dose (obtained with Ed=21 eV):

E1 Dose

Concentration of E2 traps induced by electron and proton irradiation in middle sub cell as a function of the displacement damage dose (obtained with Ed=21 eV):

E2 Dose

E1 traps introduction rate as a function of incoming electron energy: right scale NIEL values in GaAs sub cell for electrons.

Electrons E1

E2 traps concentration rate as a function of incoming electron (top) and proton (bottom) energy: right scale NIEL values in GaAs sub cell for protons and electrons.

Electrons E2

Protons E2


From C.Baur et al. (2017).
(a) Optimal fit of Pmax/Pmax(0) as function of the dose for the 3J solar cell;
(b) Optimal fit of Pmax/Pmax(0) as function of the dose for single junction bottom cell.

3J plus bottom

 

 

From C.Baur et al. (2014):
P/Pmax ratio of GaAs single junction solar cells as a function of the NIEL Dose obtained with SR-NIEL: